Structural and optical characteristics determined by the sputtering deposition conditions of oxide thin films

• Petronela Prepelita,
• Florin Garoi and
• Valentin Craciun

Beilstein J. Nanotechnol. 2021, 12, 354–365, doi:10.3762/bjnano.12.29

• -frequency magnetron sputtering (rfMS) [27][28][29][30], vacuum thermal evaporation (VTE) [31][32][33], chemical methods [34], reactive ion beam sputter deposition [35], among others. For example, SiO2 and ZnO films obtained by rfMS can be either used as dielectric materials in metasurface structures or as

• dielectric properties (e.g., SiO2 and ZnO) exhibit a dependence of the electrical resistance with temperature [22][23]. SiO2 and ZnO films are obtained by various deposition techniques, such as matrix-assisted pulsed laser evaporation (MAPLE) [24][25], spin coating of sol–gel precursor solutions [26], radio

Fabrication and characterization of Si_1−xGe_x nanocrystals in as-grown and annealed structures: a comparative study

• Muhammad Taha Sultan,
• Adrian Valentin Maraloiu,
• Ionel Stavarache,
• Jón Tómas Gudmundsson,
• Andrei Manolescu,
• Valentin Serban Teodorescu,
• Magdalena Lidia Ciurea and
• Halldór Gudfinnur Svavarsson

Beilstein J. Nanotechnol. 2019, 10, 1873–1882, doi:10.3762/bjnano.10.182

• -frequency magnetron sputtering (rfMS). In another previous study [22] we demonstrated NCs in as-grown structures with broader spectral response and improved efficiency after exposure to hydrogen plasma. The effect of annealing of such structures is yet to be explored, in order to preserve the functionality

• incidence X-ray diffraction (GIXRD) and high-resolution transmission electron microscopy (HRTEM). Strain relaxation and its effect on the formation of NCs and the resulting interface integrity was studied and compared with structures having a thicker (ca. 200 nm) SiGe layer [23], deposited by radio

Rapid thermal annealing for high-quality ITO thin films deposited by radio-frequency magnetron sputtering

• Petronela Prepelita,
• Ionel Stavarache,
• Doina Craciun,
• Florin Garoi,
• Catalin Negrila,
• Beatrice Gabriela Sbarcea and
• Valentin Craciun

Beilstein J. Nanotechnol. 2019, 10, 1511–1522, doi:10.3762/bjnano.10.149

• temperature by radio-frequency magnetron sputtering (rfMS). After deposition, the films were subjected to a RTA process at 575 °C (heating rate 20 °C/s), maintained at this temperature for 10 minutes, then cooled down to room temperature at a rate of 20 °C/s. The film structure was modified by changing the

• treatment in an open atmosphere. Such films could be used to manufacture transparent contact electrodes for solar cells. Keywords: conductive transparent electrodes; indium tin oxide (ITO) films; optical properties; radio-frequency magnetron sputtering (rfMS); rapid thermal annealing (RTA); Introduction

• ]. Despite its low cost, the radio-frequency magnetron sputtering (rfMS) deposition technique [31][32] involves sophisticated deposition equipment, allowing for the quick production of functional coatings, in addition to the possibility of adjusting the deposition parameters of the thin films to provide a